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GE FANUC IC660TBD024M Memory Module: Industrial Grade Storage Solution

The GE FANUC IC660TBD024M Memory Module is an industrial-grade storage solution designed to enhance data processing capabilities within demanding automation environments. It supports high-speed operations and robust reliability, catering to applications requiring extensive memory capacity and exceptional performance.

Memory Capacity:24 MB

Data Transfer Rate:10 Mbit/s

Operating Temperature Range:-20°C to +60°C

Power Consumption:2 W

Interface Type:RS-485

Connectors:DB-9 Female connector

    Introducing the GE FANUC IC660 TBD024M Memory Module, a high-performance addition to your industrial control system. This compact yet powerful memory module is specifically designed to elevate the data processing capabilities of your system, offering unparalleled reliability and efficiency.

    With a substantial 24 MB of SRAM capacity, it ensures swift data access and minimal latency, crucial for real-time operations in manufacturing environments. The PCI bus interface seamlessly integrates with your existing system architecture, facilitating easy installation and operation.

    Engineered for versatility, this memory module operates efficiently within an extended temperature range of -20°C to +60°C, ensuring reliable performance in various industrial conditions. It consumes less than 10W of power, contributing to energy efficiency without compromising on performance.

    The GE FANUC IC660 TBD024M is upgradeable, allowing you to expand its capabilities according to your evolving needs. Its compliance with international safety standards, including UL and CE, underscores its commitment to quality and safety in industrial applications.

    Experience enhanced productivity and precision with the GE FANUC IC660 TBD024M Memory Module. Its robust design, combined with cutting-edge technology, makes it the ideal choice for optimizing your industrial control systems.

GE FANUC IC660TBD024M memory module




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